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CEC3P07 Datasheet Preview

CEC3P07 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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CEC3P07 pdf
CEC3P07
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -37A, RDS(ON) = 10m@VGS = -10V.
RDS(ON) = 15m@VGS = -4.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
S
8 76 5
Bottom View
DFN3*3
4 321
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous
TC = 25 C
TC = 100 C
TA = 25 C
TA = 100 C
ID
-37
-23
-11
-7
Drain Current-Pulsed a
TC = 25 C
TA = 25 C
Maximum Power Dissipation
TC = 25 C
TA = 25 C
Operating and Store Temperature Range
IDM
PD
TJ,Tstg
-148
-44
25
2.5
-55 to 150
Units
V
V
A
A
A
A
A
A
W
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case b
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJc
RθJA
Limit
5
50
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2015.Apr
http://www.cetsemi.com



CET
CET

CEC3P07 Datasheet Preview

CEC3P07 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEC3P07 pdf
CEC3P07
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -10A
VGS = -4.5V, ID =-5A
Dynamic Characteristics d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = -24V, ID = -10A,
VGS= -10V, RGEN= 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -24V, ID = -10A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-30
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
8 10 m
12 15 m
3760
415
345
pF
pF
pF
36 ns
20 ns
109 ns
50 ns
28 nC
7 nC
11 nC
-2.5 A
-1 V
2


Part Number CEC3P07
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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CEC3P07 pdf
CEC3P07 Datasheet PDF
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