http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





CEL
CEL

D5702 Datasheet Preview

D5702 Datasheet

UPD5702

No Preview Available !

D5702 pdf
www.DataSheet4U.com
NEC's 2.4 GHz
Si LD MOS POWER AMPLIFIER UPD5702TU
FEATURES
• MEDIUM OUTPUT POWER:
POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz
• ON CHIP OUTPUT POWER CONTROL FUNCTION
• SINGLE SUPPLY VOLTAGE:
VDS = 3.0 V TYP
• PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm)
SUITABLE FOR HIGH- DENSITY SURFACE MOUNT
DESCRIPTION
NEC's UPD5702TU is a silicon LD MOS IC designed for use as
a power amplifier up to 2.4 GHz application. This IC consists of
two stage amplifiers. The device is packaged in a low cost,
surface mount 8 pin L2MM (Leadless Mini Mold) plastic pack-
age. Ideally suited for high density surface mount designs.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
INTERNAL BLOCK DIAGRAM
Pout2 1
Pout2 2
GND 3
Pin1 4
8 Pin2
7 Pin2
6 GND
5 Pout1
APPLICATIONS
• 1.9 GHZ Application Ex. PHS etc.
• 2.4 GHz application Ex. Bluetooth, Wireless LAN, etc.
• General purpose medium power AGC amplifier
ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specified)
SYMBOLS
IDS
VGS
POUT
PAE
Padj1
Padj2
IRL
ORL
ISOL
OBW
PART NUMBER
PARAMETERS AND CONDITIONS
Circuit Current, PIN = -5 dBm, POUT = +20.5 dBm
Gate Bias Voltage, PIN = -5 dBm, POUT = +20.5 dBm
Output Power, PIN = -5 dBm
Power Added Efficiency, PIN = -5 dBm, POUT = +20.5 dBm
Adjacent Channel Power 1, PIN = -5 dBm, POUT = +20.5 dBm
Adjacent Channel Power 2, PIN = -5 dBm, POUT = +20.5 dBm
Input Return Loss, PIN = -20 dBm
Output Return Loss, PIN = -20 dBm
Isolation, PIN = -20 dBm
Occupied Bandwidth, PIN = -5 dBm, POUT = +20.5 dBm
UNITS
mA
V
dBm
%
dBc
dBc
dB
dB
dB
dB
UPD5702TU
MIN TYP MAX
150
2.0
20.5
27
-61
-76
10
10
45
TBD
California Eastern Laboratories



CEL
CEL

D5702 Datasheet Preview

D5702 Datasheet

UPD5702

No Preview Available !

D5702 pdf
www.DUatPaSDhe5e7t40U2.cTomU
ABSOLUTE MAXIMUM RATINGS1
(TA = 25°C unless otherwise specified)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS Supply Voltage 1
V 6.0
VGS Supply Voltage 2
PD Power Dissipation2
V 6.0
W 0.866
TA
Operating Ambient Temp. °C
-40 to +85
TSTG
Storage Temp. Range
°C -65 to +150
PIN(MAX) Maximum Input Level
dBm
+10
Tj
Junction Temperature
°C
+150
Notes:
1. Operation in excess of any one of these conditions may
result in permanent damage.
2. TA = 25°C, mounted on 330 x 21 mm epoxy glass PWB.
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
PARAMETERS
UNITS MIN TYP MAX
VDS Supply Voltage 1
V 2.7 3.0 3.6
VGS Supply Voltage 2
V 0.0 0.2 –
PIN Maximum Input Power
dBm – +5 –
ID Drain Current
mA – 165 –
ORDERING INFORMATION
PART NUMBER
QUANTITY
UPD5702TU-E2-A
TBD
TYPICAL PERFORMANCE CURVES (TA = 25°C, f = 1.9 GHz, VGS = 2.0 V unless otherwise specified)
OUTPUT POWER, GAIN AND
ADJACENT CHANNEL POWER
vs. INPUT POWER
30 -20
VDS = 3.0 V,
VGS = 2.0 V,
f = 1.90 GHz,
25 PIN = -5 dB -30
20 -40
15 -50
10
5
0
-15
-60
Pout
Gain
Padj (-900 KHz) -70
Padj (-600 KHz)
Padj (+600 KHz)
-10 -5
Padj (+900 KHz)
-80
0 5 10
Input Power, PIN (dBm)
250
200
150
100
50
0
-15
CIRCUIT CURRENT
vs. INPUT POWER
-10 -5 0 5
Input Power, PIN (dBm)
10


Part Number D5702
Description UPD5702
Maker CEL
Total Page 4 Pages
PDF Download
D5702 pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 D5702 UPD5702 CEL
CEL
D5702 pdf
2 D5702 2SD5702 ETC
ETC
D5702 pdf
3 D5703 KSD5703 Fairchild Semiconductor
Fairchild Semiconductor
D5703 pdf
4 D5703 2SD5703 Inchange Semiconductor Company
Inchange Semiconductor Company
D5703 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components