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Anpec Electronics Coropration
Anpec Electronics Coropration

APM2103SG Datasheet Preview

APM2103SG Datasheet

Dual P-Channel Enhancement Mode MOSFET

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APM2103SG pdf
APM2103SGwww.DataSheet4U.com
Dual P-Channel Enhancement Mode MOSFET
Features
Pin Description
-20V/-2.5A
RDS(ON)= 88m(typ.) @ VGS= -4.5V
RDS(ON)= 120m(typ.) @ VGS= -2.5V
R=
DS(ON)
160m
(typ.)
@
V=
GS
-1.8V
Super High Dense Cell Design
Reliable and Rugged
Applications
P Channel MOSFET
(7.8)D1
(5.6)D2
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(2)G1
(4)G2
Ordering and Marking Information
(1)S1
(3)S2
P Channel MOSFET
APM2103
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2103 :
M2103
Package Code
SG : JSC70-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1
www.anpec.com.tw



Anpec Electronics Coropration
Anpec Electronics Coropration

APM2103SG Datasheet Preview

APM2103SG Datasheet

Dual P-Channel Enhancement Mode MOSFET

No Preview Available !

APM2103SG pdf
APM2103SGwww.DataSheet4U.com
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID *
IDM *
IS *
TJ
TSTG
PD *
RθJA *
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
VGS=-4.5V
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
TA =25°C
TA =100°C
Thermal Resistance-Junction to Ambient
Notes: *Surface Mounted on 1in2 pad area, t 5sec.
Rating
-20
±12
-2.5
b
-10
-1.3
150
-55 to 150
1.14
0.45
110
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS=0V, IDS=250µA
VDS=-16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS= VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-2.5A
RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A
VSD a Diode Forward Voltage
Gate Charge Characteristics b
VGS=-1.8V, IDS=-1A
ISD=-1.3A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-2.5A
APM2103SG
Unit
Min. Typ. Max.
-20 V
-1
µA
-30
-0.5 -0.7 -1
V
±10 µA
88 110
120 160 m
160 260
-0.8 -1.3 V
5.8 8
1.3 nC
1.1
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
2
www.anpec.com.tw


Part Number APM2103SG
Description Dual P-Channel Enhancement Mode MOSFET
Maker Anpec Electronics Coropration
Total Page 8 Pages
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