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Analog Devices Semiconductor Electronic Components Datasheet

BUF04GP Datasheet

Closed-Loop High Speed Buffer

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BUF04GP pdf
a
FEATURES
Bandwidth – 110 MHz
Slew Rate – 3000 V/s
Low Offset Voltage – <1 mV
Very Low Noise – < 4 nV/Hz
Low Supply Current – 8.5 mA Mux
Wide Supply Range – ؎5 V to ؎15 V
Drives Capacitive Loads
Pin Compatible with BUF03
APPLICATIONS
Instrumentation Buffer
RF Buffer
Line Driver
High Speed Current Source
Op Amp Output Current Booster
High Performance Audio
High Speed AD/DA
Closed-Loop
High Speed Buffer
BUF04*
FUNCTIONAL BLOCK DIAGRAMS
8-Lead Narrow-Body SO
(S Suffix)
Plastic DIP
8-Lead and Cerdip
(P, Z Suffix)
1
BUF04
NULL 1
NC 2
IN 3
V– 4
BUF04
Top View
8 NULL
7 V+
6 OUT
5 NC
NC = NO CONNECT
GENERAL DESCRIPTION
The BUF04 is a wideband, closed-loop buffer that combines
state of the art dynamic performance with excellent dc
performance. This combination enables designers to maximize
system performance without any speed versus dc accuracy
compromises.
Built on a high speed Complementary Bipolar (CB) process for
better power performance ratio, the BUF04 consumes less than
8.5 mA operating from ±5 V or ±15 V supplies. With a 2000 V/µs
min slew rate, and 100 MHz gain bandwidth product, the
BUF04 is ideally suited for use in high speed applications where
low power dissipation is critical.
Full ± 10 V output swing over the extended temperature range
along with outstanding ac performance and high loop gain
accuracy makes the device useful in high speed data acquisition
systems.
High slew rate and very low noise and THD, coupled with wide
input and output dynamic range, make the BUF04 an excellent
choice for video and high performance audio circuits.
The BUF04’s inherent ability to drive capacitive loads over a
wide voltage and temperature range makes it extremely useful
for a wide variety of applications in military, industrial, and
commercial equipment.
The BUF04 is specified over the extended industrial (–40°C to
+85°C) and military (–55°C to +125°C) temperature range.
BUF04s are available in plastic and ceramic DIP plus SO-8
surface mount packages.
Contact your local sales office for MIL-STD-883 data sheet and
availability.
*Patent pending.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703


Analog Devices Semiconductor Electronic Components Datasheet

BUF04GP Datasheet

Closed-Loop High Speed Buffer

No Preview Available !

BUF04GP pdf
BUF04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = ؎15.0 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol Conditions
Min Typ Max
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Voltage Range
Offset Voltage Drift
Offset Null Range
VOS
IB
VCM
VOS/T
–40°C TA +85°C
VCM = 0
–40°C TA +85°C
0.3 1
1.3 4
0.7 5
2.2 10
± 13
30
± 25
OUTPUT CHARACTERISTICS
Output Voltage Swing
VO
Output Current – Continuous
Peak Output Current
TRANSFER CHARACTERISTICS
Gain
Gain Linearity
IOUT
IOUTP
AVCL
NL
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
DYNAMIC PERFORMANCE
Slew Rate
Bandwidth
Bandwidth
Bandwidth
Settling Time
Differential Phase
Differential Gain
Input Capacitance
PSRR
ISY
SR
BW
BW
BW
RL = 150 ,
–40°C TA +85°C
RL = 2 k,
–40°C TA +85°C
Note 2
± 10.5
± 10
± 13
± 13
± 50
± 11.1
± 11
± 13.5
± 13.15
± 65
± 80
RL = 2 k
–40°C TA +85°C
RL = 1 k, VO = ± 10 V
RL = 150 k
0.995
0.995
0.9985
0.9980
0.005
0.008
1.005
1.005
VS = ± 4.5 V to ± 18 V
–40°C TA +85°C
VO = 0 V, RL =
–40°C TA +85°C
76 93
76 93
6.9 8.5
6.9 8.5
RL = 2 k, CL = 70 pF
–3 dB, CL = 20 pF, RL =
–3 dB, CL = 20 pF, RL = 1 k
–3 dB, CL = 20 pF, RL = 150
VIN = ±10 V Step to 0.1%
f = 3.58 MHz, RL = 150
f = 4.43 MHz, RL = 150
f = 3.58 MHz, RL = 150
f = 4.43 MHz, RL = 150
2000
3000
110
110
110
60
0.02
0.03
0.014
0.008
3
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
en f = 1 kHz
in f = 1 kHz
4
2
NOTE
1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C with an LTPD of 1.3.
Specifications subject to change without notice.
Units
mV
mV
µA
µA
V
µV/°C
mV
V
V
V
V
mA
mA
V/V
V/V
%
%
dB
dB
mA
mA
V/µs
MHz
MHz
MHz
ns
Degrees
Degrees
%
%
pF
nV/Hz
pA/Hz
–2– REV. 0


Part Number BUF04GP
Description Closed-Loop High Speed Buffer
Maker Analog Devices
Total Page 16 Pages
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