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Advanced Semiconductor
Advanced Semiconductor

5082-3080 Datasheet Preview

5082-3080 Datasheet

SILICON PIN DIODE

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5082-3080 pdf
SILICON PIN DIODE
5082-3080
DESCRIPTION:
The ASI 5082-3080 PIN Diode is
Designed for Low Power RF Switching
and Attenuating Applications.
MAXIMUM RATINGS
I 250 mA
V 100 V
PDISS
250 mW @ TC = 25 °C
TJ
TSTG
-65 °C to +150 °C
-65 °C to +150 °C
TSOLD
260 °C for 5 sec.
PACKAGE STYLE 15
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
VR IR = 10 µA
VF IF = 100 mA
τ
IF = 50 mA
IR = 250 mA
RS IF = 100 mA
f = 100 MHz
Ct VR = 50 V
RH IF = 10 µA
RL IF = 20 mA
f = 1.0 MHz
f =100 MHz
f = 100 MHz
MINIMUM TYPICAL MAXIMUM
100
1.0
1300
2.5
UNITS
V
V
µS
1000
0.4 pF
8.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Part Number 5082-3080
Description SILICON PIN DIODE
Maker Advanced Semiconductor
Total Page 1 Pages
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