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Advanced Power Technology
Advanced Power Technology

APT13GP120B Datasheet Preview

APT13GP120B Datasheet

POWER MOS 7 IGBT

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APT13GP120B pdf
TYPICAL PERFORMANCE CURVES
®
1200V APT13GP120B_S(G)
APT13GP120B
APT13GP120S
APT13GP120BG* APT13GP120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
www.DataSheet4UUl.tcroamfast Tail Current shutoff
• 100 kHz operation @ 600V, 10A
• 50 kHz operation @ 600V, 16A
• RBSOA Rated
B
TO-247
GC E
D3PAK
S
C
GE
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT13GP120B_S(G)
UNIT
VCES
VGE
I C1
I C2
I CM
RBSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
41
20
50
50A @ 960V
250
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
1200
3 4.5 6 Volts
3.3 3.9
3.0
500
3000
µA
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com



Advanced Power Technology
Advanced Power Technology

APT13GP120B Datasheet Preview

APT13GP120B Datasheet

POWER MOS 7 IGBT

No Preview Available !

APT13GP120B pdf
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
RBSOA Reverse Bias Safe Operating Area
td(on)
www.DataSheet4U.ctorm
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 13A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 960V
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 13A
RG = 5
TJ = +25°C
MIN
50
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 13A
RG = 5
TJ = +125°C
APT13GP120B_S(G)
TYP
1145
90
15
7.5
55
8
26
MAX
UNIT
pF
V
nC
A
9
12 ns
28
34
115
330 µJ
165
9
12 ns
70
200
225
710 µJ
840
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
RθJC
WT
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.50
N/A
°C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
aEdond1inisg
the clamped inductive turn-on energy of the IGBT only,
to the IGBT turn-on loss. Tested in inductive switching
without the effect
test circuit shown
of
in
a commutating diode reverse recovery current
figure 21, but with a Silicon Carbide diode.
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT13GP120B
Description POWER MOS 7 IGBT
Maker Advanced Power Technology
Total Page 6 Pages
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