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Advanced Power Electronics
Advanced Power Electronics

AP88L02S Datasheet Preview

AP88L02S Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP88L02S pdf
Advanced Power
Electronics Corp.
AP88L02S/P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching
Description
G
D
S
BVDSS
RDS(ON)
ID
25V
5mΩ
88A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP88L02P) is available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G D S TO-263(S)
G
D
S
Rating
25
± 20
88
55
321
96
0.77
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.3
62
Unit
/W
/W
Data & specifications subject to change without notice
200218032



Advanced Power Electronics
Advanced Power Electronics

AP88L02S Datasheet Preview

AP88L02S Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP88L02S pdf
AP88L02S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=40A
VGS=4.5V, ID=28A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=40A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS= ± 20V
ID=40A
VDS=20V
VGS=5V
VDS=15V
ID=25A
RG=3.3Ω,VGS=10V
RD=0.6Ω
VGS=0V
VDS=25V
f=1.0MHz
25 - - V
- 0.037 - V/
- - 5 mΩ
- - 10 mΩ
1 - 3V
- 45 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 50 - nC
- 5.5 - nC
- 38 - nC
- 10.5 - ns
- 84 - ns
- 38 - ns
- 115 - ns
- 1660 - pF
- 1000 - pF
- 400 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.26V
Tj=25, IS=88A, VGS=0V
Min. Typ. Max. Units
- - 88 A
- - 321 A
- - 1.26 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.


Part Number AP88L02S
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 6 Pages
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