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ADS4C60B Datasheet Preview

ADS4C60B Datasheet

3 Quadrants Triacs

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                                                                        ADS4C60B/80B
3 Quadrants Triacs
General Description
High current density due to mesa technology .the ADS4C triac
series is suitable for general purpose AC switching. They can be
used as an ON/OFF function in applications such as static relays,
heating regulation, Rectifier-fed DC inductive loads e.g.DC motors
and solenoids , motor speed controllers.
2.T2
3.Gate
1.T1
Features
Repetitive Peak Off-State Voltage: 600Vand800V
R.M.S On-State Current ( IT(RMS)= 4A )
High Commutation dv/dt
These Devices are Pb-Free and are RoHS Compliant
2
321
TO-126
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 110 °C
Conditions
ADS4C60B
ADS4C80B
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 125°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 125°C
Average Gate Power Dissipation(Tj=125°C)
Peak Gate Power Dissipation(tp=20us,Tj=125°C)
Operating Junction Temperature
Storage Temperature
Ratings
600
800
4
25/27
3.1
50
2
0.5
5
- 40 ~ 125
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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Feb,2013 -Rev.3.02



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ADS4C60B Datasheet Preview

ADS4C60B Datasheet

3 Quadrants Triacs

No Preview Available !

ADS4C60B pdf
 
ADV 
                                                                        ADS4C60B/80B
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
(dV/dt)c
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Q1-Q2-Q3
NonTrigger Gate
Voltage
Q1-Q2-Q3 Gate Trigger Voltage
Q1-Q2-Q3 Gate Trigger Current
Q1-Q2-Q3
Holding Current
Q1-Q3
Q2
Latching Current
Critical Rate of Rise of Off-State
Voltage
Rate of Change of Commutating
Current,
Junction to case (AC)
Junction to ambient
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 125°C
ITM = 5A, tp = 380 μs
VD = VDRM RL = 3.3 k
Tj = 125°C
VD = 12V RL = 33
IT = 0.1A
IG = 1.2 IGT
VD = 2/3VDRM gate open
Tj = 125°C
(dI/dt)c=-1.7A/ms
Tj = 125°C
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Max.
Max.
ADS4C60B/80B
T S Blank B
5
1
1.7
Unit
uA
mA
V
0.2 V
1.3 V
5 10 35 50 mA
10 15 40 60 mA
10 25 50 70
mA
15 30 70 80
20 40 400 1000 V/μs
0.5 1 10 25 V/μs
3.0 °C/W
100 °C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
2/6
www.advsemi.com
Feb,2013 -Rev.3.02


Part Number ADS4C60B
Description 3 Quadrants Triacs
Maker ADV
Total Page 6 Pages
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