| Description | ADV ADM25P06E P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V ID -26A RDS(ON) (mΩ) 35mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forwa... |
| Features |
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th) IGSS
Gate Threshold Voltage Gate Leakage Current
RDS(ON)
Drain-SourceOn-stateResistance⑵
gFS
Forward transconductance⑵
VGS=0V, IDS=-250uA VDS= -48V, VGS=0V VDS=-40V,VGS=0V TJ=125°C VDS=VGS, IDS=-25...
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| Datasheet |
 ADM25P06E Datasheet - 659.29KB |
