| Part Number | YJS12G06A |
| Manufacturer | Yangzhou Yangjie |
| Title | N-Channel Enhancement Mode Field Effect Transistor |
| Description | ●Split Gate Trench Power MV MOSFET technology ●Low RDS(ON) ●Low Gate Charge ●Optimized for fast-switching applications Applications ●Synchronus R... |
| Features |
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| Datasheet |
 YJS12G06A Datasheet 572.54KB |
