Part Number | V20120SG-E3 |
Manufacturer | Vishay (https://www.vishay.com/) |
Title | High Voltage Trench MOS Barrier Schottky Rectifier |
Description | V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rect... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22... |
Datasheet | V20120SG-E3 Datasheet |