| Part Number | TIP112 |
| Manufacturer | UTC |
| Title | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
| Description | UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=... |
| Features |
* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use
EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)
B
C
E
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector to Base Voltage Collecto...
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| Datasheet |
 TIP112 Datasheet 128.62KB |
