| Part Number | TGF2023-2-02 |
| Manufacturer | TriQuint Semiconductor |
| Title | 12 Watt Discrete Power GaN on SiC HEMT |
| Description | The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven... |
| Features |
• Frequency Range: DC - 18 GHz • 40.1 dBm Nominal PSAT at 3 GHz • 73.3% Maximum PAE • 21 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional Block ... |
| Datasheet |
 TGF2023-2-02 Datasheet
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