| Part Number | T1G6001032-SM |
| Manufacturer | TriQuint Semiconductor |
| Title | GaN RF Power Transistor |
| Description | The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s pr... |
| Features |
• Frequency: DC to 6 GHz • Output Power (P3dB): 10 W Peak at 3.1 GHz • Linear Gain: >17 dB at 3.1 GHz • Operating Voltage: 32 V • Low thermal resistance package Functional Block Diagram General Description The TriQuint T1G6001032-SM is a 10 W (P3dB... |
| Datasheet |
 T1G6001032-SM Datasheet 1.09MB |
