| Part Number | TP65H300G4LSG |
| Manufacturer | Transphorm |
| Title | GaN FET |
| Description | The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. It combines stateof-the-art high voltage GaN HEMT an... |
| Features |
Gen IV technology JEDEC-qualified GaN technology Dynamic RDS(on) production tested Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability Very low QRR Reduced crossover loss Ben... |
| Datasheet |
 TP65H300G4LSG Datasheet 1.32MB |
