| Part Number | TP65H035G4WS |
| Manufacturer | Transphorm |
| Title | SuperGaN FET |
| Description | The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art... |
| Features |
JEDEC qualified GaN technology Dynamic RDS(on)eff production tested Robust design, defined by — Wide gate safety margin — Transient over-voltage capability Enhanced inrush current capability Very low QRR Reduced crossover loss Benefits ... |
| Datasheet |
 TP65H035G4WS Datasheet
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