| Part Number | TC2998E |
| Manufacturer | Transcom |
| Title | GaAs Power FETs |
| Description | The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The ceramic package provides the best thermal ... |
| Features |
20 W Typical Power 10.5 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested DESCRIPTION The TC2998E is a packaged Pseudomorphic High Electron Mobility Tr... |
| Datasheet |
 TC2998E Datasheet 95.11KB |
