| Part Number | TC2997B |
| Manufacturer | Transcom |
| Title | GaAs Power FETs |
| Description | The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange cera... |
| Features |
• 20W Typical Power at 1.9 GHz • 12 dB Typical Linear Power Gain at 1.9 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Lg = 1 µm, Wg = 50 mm • 100 % DC and R... |
| Datasheet |
 TC2997B Datasheet 103.27KB |
