| Part Number | TPC8A02-H |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | N-Channel MOSFET |
| Description | TPC8A02-H www..com ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-... |
| Features |
DRAIN，CATHODE ― ― 2-6J1B
Weight: 0.085 g (typ.)
Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a)...
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| Datasheet |
 TPC8A02-H Datasheet 507.61KB |
