Part Number | TIM5359-45SL |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Title | MICROWAVE POWER GaAs FET |
Description | FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ・HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ・LOW INTERMOD... |
Features |
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 46.5dBm at 5.3GHz to 5.9GHz ・HIGH GAIN
G1dB= 9.0dB at 5.3GHz to 5.9GHz ・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWE...
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Datasheet | TIM5359-45SL Datasheet |