| Part Number | TC55VBM316AFTN |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| Description | The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fab... |
| Features |
• • • • • • • Low-power dissipation Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 and CE2 Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Wide... |
| Datasheet |
 TC55VBM316AFTN Datasheet
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