| Part Number | SSM6G18NU |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon Epitaxial Schottky Barrier Diode |
| Description | Composite Devices Silicon P-Channel MOS / Epitaxial Schottky Barrier SSM6G18NU SSM6G18NU 1. Applications • Power Management Switches 2. Features... |
| Features |
(1) Combined a P-channel MOSFET and a Schottky barrier diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.5 V) R...
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| Datasheet |
 SSM6G18NU Datasheet
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