| Part Number | SSM5H06FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon Epitaxial Schottky Barrier Diode |
| Description | SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter • • Combined Nch MOSFET and Schottky Di... |
| Features |
ing temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~100 Unit °C °C
Weight: 3 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) m...
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| Datasheet |
 SSM5H06FE Datasheet 147.74KB |
