| Part Number | SSM5G09TU |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | DC-DC Converter |
| Description | SSM5G09TU Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier SSM5G09TU 1. Applications • DC-DC Converters 2. Features (... |
| Features |
(1) Combined an P-channel MOSFET and a diode in one package. (2) Low RDS(ON) and Low VF
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.5 V)
3. Packaging and Internal ...
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| Datasheet |
 SSM5G09TU Datasheet
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