| Part Number | JDH3D01S |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Diode Silicon Epitaxial Schottky Barrier Type |
| Description | JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Small package Unit: mm Absolute Maximum Ratings ... |
| Features |
1-2S1C
JEDEC JEITA TOSHIBA
Weight:0.0024g(typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 mA VF = 0.5 V VR = 0.5 V Test Condition
Min
⎯ 25 ⎯ ⎯
Typ.
0....
|
| Datasheet |
 JDH3D01S Datasheet
|
