| Part Number | HN2A26FS |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Frequency General-Purpose Amplifier Applications |
| Description | HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm • • • • •... |
| Features |
lectrical Characteristics (Ta = 25°C)
www.DataSheet4U.com
Characteristic Symbol ICBO IEBO hFE(Note) VCE (sat) fT Cob Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −6 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCE = −10 V, IC = −1 mA VCB = ...
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| Datasheet |
 HN2A26FS Datasheet 169.79KB |
