| Part Number | GT40Q322 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary www.datasheet4u.com GT40Q322 Unit: mm Voltage Resonance I... |
| Features |
Gate Emitter
1
2003-07-07
GT40Q322
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current
www.datasheet4u.com Gate-emitter cut-off voltage
Symbol IGES ICES VGE (OFF) VCE (sat) Cies
Test Condition ...
|
| Datasheet |
 GT40Q322 Datasheet 116.90KB |
