| Part Number | GT25G101 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturat... |
| Features |
V (Pulsed) VCE=10V, VGE=0, f=1MHz MIN. ― ― 4 ― ― ― ― ― ― ― TYP. ― ― 5 5 2000 0.1 0.15 4.0 4.5 ― MAX. ±100 10 7 8 ― 0.5 0.5 6.0 7.0 1.66 °C / W µs UNIT nA µA V V pF
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2002-02-06
GT25G101
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2002-02-06
GT25G101
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2002-02-06
GT25G101
RESTRICTIO...
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| Datasheet |
 GT25G101 Datasheet
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