| Part Number | GT10Q101 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm • • •... |
| Features |
0 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 10 A VGG = ±15 V, RG = 75 Ω (Note1) Min 4.0 Typ. 2.1 600 0.07 0.30 0.16 0.50 Max ±500 1.0 7....
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| Datasheet |
 GT10Q101 Datasheet
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