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CBS05F30

Toshiba Semiconductor
Part Number CBS05F30
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title Schottky Barrier Diode
Description Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.38 V (typ....
Features (1) Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Ch...

Datasheet PDF File CBS05F30 Datasheet 123.60KB

CBS05F30   CBS05F30   CBS05F30  




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