Part Number | 60N321 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Title | GT60N321 |
Description | GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit... |
Features |
ay cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing t...
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Datasheet | 60N321 Datasheet |