| Part Number | TPC8A03-H |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Field Effect Transistor |
| Description | TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A03-H High Efficiency D... |
| Features |
(Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)
Drain power dissipation Drain power dissipation
W W
Weight: 0.085g (typ.)
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy
Circuit Configuration
mJ A mJ °C °...
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| Datasheet |
 TPC8A03-H Datasheet 247.17KB |
