Part Number | TIM8596-8 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Title | MICROWAVE POWER GaAs FET |
Description | FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 39.5dBm at 8.5GHz to 9.6GHz ・HIGH GAIN G1dB= 6.0dB at 8.5GHz to 9.6GHz ・HERMETICALLY... |
Features |
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 39.5dBm at 8.5GHz to 9.6GHz ・HIGH GAIN
G1dB= 6.0dB at 8.5GHz to 9.6GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM8596-8
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS ...
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Datasheet | TIM8596-8 Datasheet |