| Part Number | TIM7785-8SL |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | MICROWAVE POWER GaAs FET |
| Description | FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY... |
| Features |
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 28.5dBm Single Carrier Level.
MICROWAVE POW...
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| Datasheet |
 TIM7785-8SL Datasheet
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