| Part Number | SSM6H19NU |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | DC-DC Converters |
| Description | Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier SSM6H19NU 1. Applications • DC-DC Converters 2. Features (1) N-channel MOSFET a... |
| Features |
(1) N-channel MOSFET and a schottky barrier diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V)
(2) 1.8-V gate drive voltage.
2.2. Diode Features
(1) Low forward voltage: VF = 0.51 V ...
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| Datasheet |
 SSM6H19NU Datasheet
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