| Part Number | SSM5G06FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon Epitaxial Schottky Barrier Diode |
| Description | SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications • Combined a P-channel M... |
| Features |
A
2-2P1C
Weight: 3 mg (Typ.)
Absolute Maximum Ratings (Ta = 25°C) MOSFET, SBD COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature range Operating temperature range
Tstg
−55 to 125
°C
Topr (Note3) −40 to 100
°C
Note: Using cont...
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| Datasheet |
 SSM5G06FE Datasheet
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