| Part Number | 2SB676 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER... |
| Features |
• High DC Current Gain : hFE=2000 (Min.) (vCE=-2V, I C=-1A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX., 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Colle... |
| Datasheet |
 2SB676 Datasheet
|
