Part Number | 2SA816 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Title | SILICON PNP EPITAXIAL TYPE TRANSISTOR |
Description | : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES • High Breakdown Vo... |
Features |
• High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage 'CEO Emitter-Base Voltage EBO Collect... |
Datasheet | 2SA816 Datasheet |