| Part Number | TSM1N60 |
| Manufacturer | Taiwan Semiconductor |
| Title | N-Channel Power Enhancement Mode MOSFET |
| Description | The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In add... |
| Features |
Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature
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| Datasheet |
 TSM1N60 Datasheet 205.94KB |
