| Part Number | SGM2016AN |
| Manufacturer | Sony Corporation |
| Title | GaAs N-channel Dual-Gate MES FET |
| Description | The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications i... |
| Features |
• Ultra-small package • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 900MHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Struct... |
| Datasheet |
 SGM2016AN Datasheet 56.22KB |
