| Part Number | 3VD499650YL |
| Manufacturer | Silan Microelectronics |
| Title | HIGH-VOLTAGE MOSFET |
| Description | ¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ... |
| Features |
(Tamb=25°C)
Parameter Drain -Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Static Drain- Source On State Resistance Gate-Source Leakage Current www.DataSheet4U.com Source-Drain Diode Forward on Voltage Symbol BVDSS VTH ...
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| Datasheet |
 3VD499650YL Datasheet 123.12KB |
