| Part Number | 3VD186600YL |
| Manufacturer | Silan Microelectronics |
| Title | HIGH VOLTAGE MOSFET CHIPS |
| Description | ¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanc... |
| Features |
ISTICS (Tamb=25°C)
Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Source-Drain Diode Forward On Voltage Symbol V(BR)DSS Vth(GS) lGSS IDSS RDS(on) VFSD Test ...
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| Datasheet |
 3VD186600YL Datasheet
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