Part Number | HYB3117805BSJ-60 |
Manufacturer | Siemens Semiconductor Group |
Title | 2M x 8-Bit Dynamic RAM 2k Refresh |
Description | 5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM Pin Names and Configuration A0 - A10 A0 - A9 RAS OE I/O1 - I/O8 C... |
Features |
dynamic RAMs based on the die revisions āGā & āFā and organized as 2 097 152 words by 8-bits. The HYB 5(3)117805 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both...
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Datasheet | HYB3117805BSJ-60 Datasheet |