| Part Number | BSM50GD120DN2G |
| Manufacturer | Siemens Semiconductor Group |
| Title | IGBT |
| Description | BSM 50 GD 120 DN2G IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insu... |
| Features |
2G
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 0.8 4 6.5 3 3.7
V
VGE = VCE, IC = 2 mA
Collector-emitter sa...
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| Datasheet |
 BSM50GD120DN2G Datasheet 182.91KB |
