Part Number | BF999 |
Manufacturer | Siemens Semiconductor Group |
Title | Silicon N-Channel MOSFET Triode |
Description | Silicon N Channel MOSFET Triode q BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type BF 999 Marking LB Orderi... |
Features |
2 50 18 2.5
V
V(BR) GSS IGSS
Gate-source leakage current VGS = 5 V, VDS = 0 Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA
nA mA V
IDSS – VGS (p) AC Characteristics Forward transconductance VDS = 10 V, ID... |
Datasheet | BF999 Datasheet 116.22KB |