Part Number | HFU1N65 |
Manufacturer | SemiHow |
Title | N-Channel MOSFET |
Description | HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A FEATURES Originative New ... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS...
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Datasheet | HFU1N65 Datasheet |