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K9K2G08U1A

Samsung semiconductor
Part Number K9K2G08U1A
Manufacturer Samsung semiconductor
Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
Description of Copy-back program is changed 4. Voltage range is changed -1.7V~1.95V -> 1.65V~1.95V 5. Note2 of Command Sets is added 1. CE access time : 23ns-...
Features
• Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
• Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit
• Automatic Progra...

Datasheet PDF File K9K2G08U1A Datasheet

K9K2G08U1A   K9K2G08U1A   K9K2G08U1A  




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