logo

K9F2G16Q0M

Samsung semiconductor
Part Number K9F2G16Q0M
Manufacturer Samsung semiconductor
Title FLASH MEMORY
Description Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution f...
Features
• Voltage Supply -1.8V device(K9F2GXXQ0M): 1.70V~1.95V -3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V
• Organization - Memory Cell Array -X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -...

Datasheet PDF File K9F2G16Q0M Datasheet

K9F2G16Q0M   K9F2G16Q0M   K9F2G16Q0M  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map