Part Number | K4T51163QG |
Manufacturer | Samsung |
Title | 512Mb G-die DDR2 SDRAM |
Description | The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View S 1 8 D S 2 7 D S 3 D 6 ... |
Features |
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY
Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Dra...
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Datasheet | K4T51163QG Datasheet 0.96MB |