| Part Number | K4T51083QG |
| Manufacturer | Samsung |
| Title | 512Mb G-die DDR2 SDRAM |
| Description | The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View (1) Pulse duration ≤300μs, dut... |
| Features |
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY
TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) G...
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| Datasheet |
 K4T51083QG Datasheet
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